PART |
Description |
Maker |
AK5321024 |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory 262,144 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
TC55V2001FI TC55V2001FI-10 TC55V2001FI-10L TC55V20 |
262,144-WORD BY 8-BIT STATIC RAM 262,144 - Word位静态RAM 262,144-Word By 8-Bit Static RAM(262,144× 8位高速静态RAM) 262,144 - Word位静态RAM62144字8位高速静态RAM)的
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
TC55V400AFT-55 TC55V400AFT-70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MSM521004 |
262,144-Word x 4-Bit CMOS STATIC RAM From old datasheet system
|
OKI
|
AK5328192 AK5322048 AK532512 |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
HM538253J-8 |
80ns; 1W; V(cc): -0.5 to 7.0V; 262,144-word x 8-bit multiport CMOS video RAM
|
Hitachi Semiconductor
|
HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM 262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
|
TC55NEM216AFTN55 TC55NEM216AFTN70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L |
262,144-WORD BY 16-BIT STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MSM27C402CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM
|
OKI electronic components OKI electronic componets
|
MSM5416283 |
262,144-Word x 16-Bit Multiport DRAM
|
OKI electronic componets
|